AO5600E

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

650m Ω @ 500mA, 4.5V

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Package / Case :

SOT-563, SOT-666

Continuous Drain Current (ID) :

500mA

Max Power Dissipation :

380mW

Number of Terminations :

6

FET Type :

N and P-Channel

JESD-30 Code :

R-PDSO-F6

Terminal Form :

Flat

Drain-source On Resistance-Max :

0.75Ohm

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

600mA 500mA

FET Feature :

Logic Level Gate