AO4813

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

25m Ω @ 7.1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 15V

FET Feature :

Logic Level Gate

Max Power Dissipation :

2W

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Additional Feature :

ULTRA-LOW RESISTANCE

Pin Count :

8

Number of Pins :

8

FET Type :

2 P-Channel (Dual)

Published :

2011

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

175 pF

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Continuous Drain Current (ID) :

7.1A

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount