AO4616

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Max Power Dissipation :

2W

Factory Lead Time :

18 Weeks

FET Feature :

Logic Level Gate

Radiation Hardening :

No

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2011

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Drain Current-Max (Abs) (ID) :

8A

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Current - Continuous Drain (Id) @ 25°C :

8A 7A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

888pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

7A

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

FET Type :

N and P-Channel

Power Dissipation :

2W