AML2002
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- Mfr.Part #
- AML2002
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.7A TO126ML
- Stock
- 11,800
- In Stock ：
- 11,800
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- hFE Min :
- 200
- Published :
- 2012
- Polarity/Channel Type :
- NPN
- Lens Style :
- Flat
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 220V
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Power - Max :
- 1.5W
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Max Power Dissipation :
- 1.5W
- Collector Emitter Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 8V
- Surface Mount :
- No
- Number of Pins :
- 3
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 125mV
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 35mA, 350mA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transition Frequency :
- 120MHz
- Mounting Type :
- Through Hole
- Max Collector Current :
- 700mA
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 120MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Collector Emitter Voltage (VCEO) :
- 220mV
- Datasheets
- AML2002
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
AML2002 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 125mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 35mA, 350mA.The emitter base voltage can be kept at 8V for high efficiency.The part has a transition frequency of 120MHz.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.
AML2002 Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of 125mV
the vce saturation(Max) is 220mV @ 35mA, 350mA
the emitter base voltage is kept at 8V
a transition frequency of 120MHz
AML2002 Applications
There are a lot of ON Semiconductor
AML2002 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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