AIKW30N60CTXKSA1
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- Mfr.Part #
- AIKW30N60CTXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IC DISCRETE 600V TO247-3
- Stock
- 13,890
- In Stock ：
- 13,890
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Series :
- Automotive, AEC-Q101, TrenchStop™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 60A
- Vce(on) (Max) @ Vge, Ic :
- 2.05V @ 15V, 30A
- Packaging :
- Tube
- Current - Collector Pulsed (Icm) :
- 90A
- Factory Lead Time :
- 39 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 187W
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Test Condition :
- 400V, 30A, 10.6 Ω, 15V
- IGBT Type :
- Trench Field Stop
- Operating Temperature :
- -40°C~175°C TJ
- Switching Energy :
- 690μJ (on), 770μJ (off)
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 23ns/254ns
- Gate Charge :
- 167nC
- Published :
- 2014
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- AIKW30N60CTXKSA1
AIKW30N60CTXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
AIKW30N60CTXKSA1 Description
The AIKW30N60CTXKSA1 is a Low Loss DuoPack: IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery antiparallel Emitter Controlled diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
AIKW30N60CTXKSA1 Features
-
Positive temperature coefficient in VCE(sat)
-
Low EMI
-
Low gate charge QG
-
Green package
-
Very soft, fast recovery antiparallel EmitterControlled HE
-
diode
-
TRENCHSTOP? and Fieldstop technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
-
Automotive AEC-Q101 qualified
-
Designed for DC/AC converters for Automotive Application
-
Very low VCE(sat) 1.5V (typ.)
-
Maximum junction temperature 175°C
-
Dynamically stress tested
-
Short circuit withstand time 5μs
-
100% short circuit tested
-
100% of the parts are dynamically tested
AIKW30N60CTXKSA1 Applications
-
PTC heater
-
Motor drives
-
Main inverter
-
Climate compressor
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