8050SS-D-AP
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- Mfr.Part #
- 8050SS-D-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92
- Stock
- 37,192
- In Stock ：
- 37,192
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 1W
- JESD-30 Code :
- O-PBCY-T3
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Power - Max :
- 1W
- Frequency - Transition :
- 100MHz
- Current - Collector (Ic) (Max) :
- 1.5A
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Configuration :
- Single
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Pin Count :
- 3
- Datasheets
- 8050SS-D-AP
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
8050SS-D-AP Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 80mA, 800mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
8050SS-D-AP Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz
8050SS-D-AP Applications
There are a lot of Micro Commercial Co
8050SS-D-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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