71V416YS10PHG

Manufacturer :

Renesas Electronics Corporation

Product Category :

Memory

Operating Temperature :

0°C ~ 70°C (TA)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Density :

4 Mb

Nominal Supply Current :

200mA

Memory Type :

RAM, SRAM - Asynchronous

Interface :

Parallel

Sync/Async :

ASYNCHRONOUS

Address Bus Width :

18b

Number of Ports :

1

Write Cycle Time - Word, Page :

10ns

Series :

--

Mounting Type :

Surface Mount

Access Time :

10 ns

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Supply Voltage :

3.3V

Number of Terminations :

44

Published :

2005

Package / Case :

TSOP

Supplier Device Package :

44-TSOP II

Supply Voltage :

3.3V

Number of Functions :

1

Max Operating Temperature :

70°C

Output Characteristics :

3-STATE

Number of Pins :

44

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

IDT71V416

Memory Size :

4Mb (256K x 16)

Voltage - Supply :

3 V ~ 3.6 V

Min Operating Temperature :

0°C

I/O Type :

COMMON

Memory Format :

SRAM

Min Supply Voltage :

3V

Mount :

Surface Mount

Word Size :

16b

Peak Reflow Temperature (Cel) :

260

Standby Voltage-Min :

3V

Packaging :

Bulk

Terminal Form :

Gull wing

Terminal Position :

Dual

RoHS Status :

RoHS Compliant

Temperature Grade :

COMMERCIAL

Memory Width :

16

Max Supply Voltage :

3.6V

Standby Current-Max :

0.02A

JESD-609 Code :

e3

Memory Interface :

Parallel

Pbfree Code :

yes

Terminal Pitch :

0.8mm