71V416L10BE

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Mfr.Part #
71V416L10BE
Manufacturer
Renesas Electronics Corporation
Package / Case
TFBGA
Datasheet
Download
Description
IC SRAM 4MBIT PARALLEL 48CABGA
Stock
406
In Stock :
406

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Memory
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
4 (72 Hours)
Factory Lead Time :
12 Weeks
Density :
4 Mb
Lead Free :
Contains Lead
Terminal Finish :
Tin/Lead (Sn63Pb37)
Word Size :
16b
Number of Pins :
48
Peak Reflow Temperature (Cel) :
225
I/O Type :
COMMON
Width :
9mm
Number of Functions :
1
Length :
9mm
Terminal Position :
BOTTOM
Radiation Hardening :
No
Min Supply Voltage :
3V
Memory Size :
512kB
Nominal Supply Current :
180mA
Memory Type :
RAM, SDR, SRAM - Asynchronous
Pin Count :
48
Max Supply Voltage :
3.6V
Operating Supply Voltage :
3.3V
Package / Case :
TFBGA
Published :
2013
JESD-609 Code :
e0
Thickness :
1.2mm
Access Time :
10 ns
Standby Voltage-Min :
3V
Max Operating Temperature :
70°C
Time@Peak Reflow Temperature-Max (s) :
20
Terminal Pitch :
0.75mm
Address Bus Width :
18b
Number of Ports :
1
Pbfree Code :
No
Number of Terminations :
48
Interface :
Parallel
Temperature Grade :
COMMERCIAL
Mount :
Surface Mount
Output Characteristics :
3-STATE
Min Operating Temperature :
0°C
Sync/Async :
ASYNCHRONOUS
Terminal Form :
Ball
Supply Voltage :
3.3V
Datasheets
71V416L10BE
Introducing Memory Renesas Electronics Corporation 71V416L10BE from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:48, Package / Case:TFBGA, Number of Terminations:48, 71V416L10BE pinout, 71V416L10BE datasheet PDF, 71V416L10BE amp .Beyond Memory Renesas Electronics Corporation 71V416L10BE ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Renesas Electronics Corporation 71V416L10BE


Memory Renesas Electronics Corporation 71V416L10BE Overview

Introducing the cutting-edge IC SRAM 4MBIT PARALLEL 48CABGA, meticulously crafted by Renesas Electronics Corporation. This dynamic memory solution epitomizes excellence, boasting unparalleled performance and reliability tailored to meet the demands of modern electronic applications.

Designed with precision and ingenuity, the 71V416L10BE offers a seamless integration into diverse electronic systems, promising swift data access and transfer speeds. Its compact form factor, coupled with robust construction, ensures longevity and stability in operation, making it an ideal choice for mission-critical deployments.

Experience the epitome of memory technology with Renesas Electronics Corporation's innovative IC SRAM 4MBIT PARALLEL 48CABGA, setting new standards in performance, efficiency, and versatility.

71V416L10BE Features

  • High-speed data access: Facilitates rapid retrieval and transmission of data, enhancing overall system performance.
  • Robust construction: Engineered for durability and reliability, ensuring consistent operation in demanding environments.
  • Compact design: Space-efficient form factor enables seamless integration into various electronic devices and systems.
  • Low power consumption: Optimized energy efficiency prolongs battery life and reduces overall power consumption.
  • Wide compatibility: Compatible with a range of electronic platforms, offering versatility and flexibility in application.

71V416L10BE Applications

  • Data storage systems: Utilized in data centers and enterprise storage solutions for high-speed data caching and buffering, ensuring efficient data management and access.
  • Deployed within data storage systems, the IC SRAM 4MBIT PARALLEL 48CABGA facilitates rapid data retrieval and storage, optimizing performance and reliability in critical data-centric applications.

  • Networking equipment: Integrated into networking devices such as routers and switches for fast packet buffering and routing, ensuring seamless data transmission and network efficiency.
  • Integrated within networking equipment, the IC SRAM 4MBIT PARALLEL

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Shipping Method

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Shipping Cost

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