71V416L10BE
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- Mfr.Part #
- 71V416L10BE
- Manufacturer
- Renesas Electronics Corporation
- Package / Case
- TFBGA
- Datasheet
- Download
- Description
- IC SRAM 4MBIT PARALLEL 48CABGA
- Stock
- 406
- In Stock ：
- 406
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- Manufacturer :
- Renesas Electronics Corporation
- Product Category :
- Memory
- Pin Count :
- 48
- Nominal Supply Current :
- 180mA
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e0
- Supply Voltage :
- 3.3V
- I/O Type :
- COMMON
- Min Operating Temperature :
- 0°C
- Number of Functions :
- 1
- Max Supply Voltage :
- 3.6V
- Published :
- 2013
- Thickness :
- 1.2mm
- Radiation Hardening :
- No
- Terminal Form :
- Ball
- Min Supply Voltage :
- 3V
- Sync/Async :
- ASYNCHRONOUS
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Mount :
- Surface Mount
- Terminal Position :
- BOTTOM
- Terminal Pitch :
- 0.75mm
- Operating Supply Voltage :
- 3.3V
- Access Time :
- 10 ns
- Number of Ports :
- 1
- Number of Terminations :
- 48
- Temperature Grade :
- COMMERCIAL
- Memory Size :
- 512kB
- Width :
- 9mm
- Standby Voltage-Min :
- 3V
- Max Operating Temperature :
- 70°C
- Word Size :
- 16b
- Interface :
- Parallel
- Lead Free :
- Contains Lead
- Address Bus Width :
- 18b
- Density :
- 4 Mb
- Length :
- 9mm
- Number of Pins :
- 48
- Peak Reflow Temperature (Cel) :
- 225
- Moisture Sensitivity Level (MSL) :
- 4 (72 Hours)
- Pbfree Code :
- No
- Output Characteristics :
- 3-STATE
- Package / Case :
- TFBGA
- Terminal Finish :
- Tin/Lead (Sn63Pb37)
- Memory Type :
- RAM, SDR, SRAM - Asynchronous
- Datasheets
- 71V416L10BE
71V416L10BE Documents
Memory Renesas Electronics Corporation 71V416L10BE Overview
Introducing the cutting-edge IC SRAM 4MBIT PARALLEL 48CABGA, meticulously crafted by Renesas Electronics Corporation. This dynamic memory solution epitomizes excellence, boasting unparalleled performance and reliability tailored to meet the demands of modern electronic applications.
Designed with precision and ingenuity, the 71V416L10BE offers a seamless integration into diverse electronic systems, promising swift data access and transfer speeds. Its compact form factor, coupled with robust construction, ensures longevity and stability in operation, making it an ideal choice for mission-critical deployments.
Experience the epitome of memory technology with Renesas Electronics Corporation's innovative IC SRAM 4MBIT PARALLEL 48CABGA, setting new standards in performance, efficiency, and versatility.
71V416L10BE Features
- High-speed data access: Facilitates rapid retrieval and transmission of data, enhancing overall system performance.
- Robust construction: Engineered for durability and reliability, ensuring consistent operation in demanding environments.
- Compact design: Space-efficient form factor enables seamless integration into various electronic devices and systems.
- Low power consumption: Optimized energy efficiency prolongs battery life and reduces overall power consumption.
- Wide compatibility: Compatible with a range of electronic platforms, offering versatility and flexibility in application.
71V416L10BE Applications
- Data storage systems: Utilized in data centers and enterprise storage solutions for high-speed data caching and buffering, ensuring efficient data management and access.
- Networking equipment: Integrated into networking devices such as routers and switches for fast packet buffering and routing, ensuring seamless data transmission and network efficiency.
Deployed within data storage systems, the IC SRAM 4MBIT PARALLEL 48CABGA facilitates rapid data retrieval and storage, optimizing performance and reliability in critical data-centric applications.
Integrated within networking equipment, the IC SRAM 4MBIT PARALLEL
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