71V416YL10BE

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Mfr.Part #
71V416YL10BE
Manufacturer
Renesas Electronics Corporation
Package / Case
48-TFBGA
Datasheet
Download
Description
IC SRAM 4MBIT PARALLEL 48CABGA
Stock
45,994
In Stock :
45,994

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Memory
Moisture Sensitivity Level (MSL) :
4 (72 Hours)
Packaging :
Tray
Memory Interface :
Parallel
RoHS Status :
Non-RoHS Compliant
Access Time :
10ns
Supplier Device Package :
48-CABGA (9x9)
Mounting Type :
Surface Mount
Operating Temperature :
0°C~70°C TA
Package / Case :
48-TFBGA
Memory Type :
Volatile
Memory Format :
SRAM
Memory Size :
4Mb 256K x 16
Voltage - Supply :
3V~3.6V
Write Cycle Time - Word, Page :
10ns
Datasheets
71V416YL10BE
Introducing Memory Renesas Electronics Corporation 71V416YL10BE from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:0°C~70°C TA, Package / Case:48-TFBGA, 71V416YL10BE pinout, 71V416YL10BE datasheet PDF, 71V416YL10BE amp .Beyond Memory Renesas Electronics Corporation 71V416YL10BE ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Renesas Electronics Corporation 71V416YL10BE


Memory Renesas Electronics Corporation 71V416YL10BE Overview

Introducing the cutting-edge Memory solution from Renesas Electronics Corporation, the 71V416YL10BE. This innovative Integrated Circuits product is meticulously engineered to meet the demands of modern electronic systems, offering unparalleled performance and reliability. Designed with precision and crafted with expertise, this IC SRAM 4MBIT PARALLEL 48CABGA redefines the standards of memory technology.

With its advanced features and exceptional quality, the Memory Renesas Electronics Corporation 71V416YL10BE stands as a testament to Renesas Electronics Corporation's commitment to excellence in semiconductor manufacturing. Elevate your projects with the reliability and performance that only Renesas Electronics Corporation can provide.

71V416YL10BE Features

  • High-Speed SRAM: The 71V416YL10BE features high-speed Static Random Access Memory (SRAM), ensuring rapid data access and retrieval for efficient system operation.
  • Large Capacity: With a capacity of 4MBIT, this IC provides ample storage space for a wide range of applications, accommodating diverse data storage needs.
  • Parallel Interface: Equipped with a parallel interface, the 71V416YL10BE facilitates seamless data transfer between the memory and other components, enhancing overall system performance.
  • Compact Design: Housed in a 48CABGA package, this IC boasts a compact and space-saving design, making it suitable for applications with size constraints.
  • Robust Construction: Built to withstand harsh operating conditions, the 71V416YL10BE offers exceptional durability and reliability, ensuring long-term functionality in demanding environments.

71V416YL10BE Applications

  • Industrial Automation Systems: The 71V416YL10BE is ideal for use in industrial automation systems, providing fast and reliable data storage and retrieval capabilities. Its robust construction ensures seamless operation in rugged industrial environments.
  • Telecommunications Equipment: In telecommunications equipment, the 71V416YL10BE facilitates efficient data processing and communication, enabling reliable performance in telecommunications networks and devices.
  • Embedded Systems: Embedded systems benefit from the high-speed and large capacity of the 71V416YL10BE, enhancing the functionality and performance of embedded applications such as automotive electronics and consumer electronics.
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Shipping Cost

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