71V416S12Y

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Mfr.Part #
71V416S12Y
Manufacturer
Renesas Electronics Corporation
Package / Case
Datasheet
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Description
IC SRAM 4MBIT PARALLEL 44SOJ
Stock
9,386
In Stock :
9,386

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Memory
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Operating Supply Voltage :
3.3V
Lead Free :
Lead Free
JESD-609 Code :
e3
Standby Current-Max :
0.02A
Number of Ports :
1
Interface :
Parallel
Max Supply Voltage :
3.6V
Sync/Async :
ASYNCHRONOUS
Pin Count :
44
Pbfree Code :
yes
Standby Voltage-Min :
3V
Number of Terminations :
44
RoHS Status :
RoHS Compliant
Radiation Hardening :
No
Length :
28.6mm
Word Size :
16b
Height Seated (Max) :
3.683mm
Density :
4 Mb
Nominal Supply Current :
180mA
Min Operating Temperature :
0°C
Output Characteristics :
3-STATE
I/O Type :
COMMON
Factory Lead Time :
12 Weeks
Supply Voltage :
3.3V
Memory Size :
512kB
Max Operating Temperature :
70°C
Terminal Finish :
Matte Tin (Sn) - annealed
Number of Functions :
1
Width :
10.2mm
Published :
2012
Terminal Position :
Dual
Number of Pins :
44
Temperature Grade :
Industrial
Min Supply Voltage :
3V
Access Time :
12 ns
Terminal Form :
J BEND
Thickness :
2.9mm
Peak Reflow Temperature (Cel) :
260
Mount :
Surface Mount
Address Bus Width :
18b
Memory Type :
RAM, SDR, SRAM - Asynchronous
Datasheets
71V416S12Y
Introducing Memory Renesas Electronics Corporation 71V416S12Y from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:44, Number of Pins:44, 71V416S12Y pinout, 71V416S12Y datasheet PDF, 71V416S12Y amp .Beyond Memory Renesas Electronics Corporation 71V416S12Y ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Renesas Electronics Corporation 71V416S12Y


Memory Renesas Electronics Corporation 71V416S12Y Overview

The Renesas Electronics Corporation 71V416S12Y is a high-performance 4Mbit SRAM device, designed to meet the demanding requirements of intensive parallel processing tasks. With its compact 44SOJ package, this SRAM provides a robust storage solution, ensuring stable and efficient operation in a variety of applications. The high-speed access times and low-power operation make the 71V416S12Y an excellent choice for embedded systems where space and power efficiency are crucial. As a product in the Memory category from Renesas, this SRAM integrates seamlessly into advanced industrial, automotive, and computing environments, offering reliability and advanced capabilities to handle substantial data throughput and storage.

71V416S12Y Features

This SRAM chip features a 4Mbit capacity with fast access times, making it suitable for high-speed operations. It operates in a parallel interface configuration, which enhances data transfer speeds and system responsiveness. The device's low-power consumption is ideal for battery-operated devices, helping to extend operational life in field applications. Moreover, its 44-pin SOJ package is designed for optimal board space utilization and is compatible with a wide range of PCB technologies.

71V416S12Y Applications

  • Automotive Systems: Utilized in engine control units and infotainment systems where fast data retrieval is critical to performance and functionality.
  • Industrial Automation: Serves as data and program storage in PLCs and CNC machines, ensuring quick access to instructions and process information for real-time operations.
  • Telecommunication: Implements in network routers and switches for buffer and caching operations, enhancing the speed and reliability of data flow across networks.
  • Consumer Electronics: Used in set-top boxes and gaming consoles where quick memory access enhances user experience by reducing load times and improving responsiveness.
  • Medical Devices: Essential in imaging systems and diagnostic equipment for fast data processing capabilities, critical for real-time patient monitoring and analysis.
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