6685_2N3906

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Mfr.Part #
6685_2N3906
Manufacturer
onsemi
Package / Case
Die
Datasheet
Download
Description
TRANS PNP 40V 0.2A DIE
Stock
14,334
In Stock :
14,334

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Current - Collector (Ic) (Max) :
200mA
Supplier Device Package :
Die
Power - Max :
625mW
Operating Temperature :
-55°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
40V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 10V
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 50mA
Packaging :
Bulk
Frequency - Transition :
250MHz
Package / Case :
Die
Datasheets
6685_2N3906
Introducing Transistors - Bipolar (BJT) - Single onsemi 6685_2N3906 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:Die, 6685_2N3906 pinout, 6685_2N3906 datasheet PDF, 6685_2N3906 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 6685_2N3906 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -55°C~150°C TJ Die Bulk Surface Mount

6685_2N3906 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.The product comes in the supplier device package of Die.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.

6685_2N3906 Features


the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the supplier device package of Die


6685_2N3906 Applications


There are a lot of ON Semiconductor
6685_2N3906 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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