5LN01SS-TL-E
- Mfr.Part #
- 5LN01SS-TL-E
- Manufacturer
- Sanyo
- Package / Case
- SC-81
- Datasheet
- Download
- Description
- N-CHANNEL SILICON MOSFET
- Stock
- 2,881
- In Stock :
- 2,881
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 150mW
- Gate Charge (Qg) (Max) @ Vgs :
- 1.57nC @ 10V
- Power Dissipation-Max :
- 150mW Ta
- Turn-Off Delay Time :
- 190 ns
- Turn On Delay Time :
- 18 ns
- Fall Time (Typ) :
- 105 ns
- Rise Time :
- 42ns
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 10V
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Published :
- 2000
- Surface Mount :
- yes
- RoHS Status :
- RoHS Compliant
- Height :
- 600μm
- Rds On (Max) @ Id, Vgs :
- 7.8 Ω @ 50mA, 4V
- Number of Pins :
- 3
- Width :
- 800μm
- JESD-609 Code :
- e6
- Package / Case :
- SC-81
- Continuous Drain Current (ID) :
- 100mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4V
- Drain to Source Voltage (Vdss) :
- 50V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 6.6pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Ta
- Length :
- 1.4mm
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 0.1A
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Vgs (Max) :
- ±10V
- ECCN Code :
- EAR99
- Datasheets
- 5LN01SS-TL-E
N-Channel Tape & Reel (TR) 7.8 Ω @ 50mA, 4V ±10V 6.6pF @ 10V 1.57nC @ 10V 50V SC-81
5LN01SS-TL-E Overview
A device's maximum input capacitance is 6.6pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.1A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 190 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 50V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4V) to reduce its overall power consumption.
5LN01SS-TL-E Features
a continuous drain current (ID) of 100mA
the turn-off delay time is 190 ns
a 50V drain to source voltage (Vdss)
5LN01SS-TL-E Applications
There are a lot of ON Semiconductor
5LN01SS-TL-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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