5LN01C-TB-E
- Mfr.Part #
- 5LN01C-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 100MA 3CP
- Stock
- 4,412
- In Stock :
- 4,412
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- Vgs (Max) :
- ±10V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 50V
- Continuous Drain Current (ID) :
- 100mA
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Ta
- FET Type :
- N-Channel
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 250mW Ta
- Rds On (Max) @ Id, Vgs :
- 7.8 Ω @ 50mA, 4V
- Width :
- 1.5mm
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 6.6pF @ 10V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- JESD-609 Code :
- e6
- Published :
- 2012
- Turn On Delay Time :
- 18 ns
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Rise Time :
- 42ns
- Fall Time (Typ) :
- 105 ns
- Power Dissipation :
- 250mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.1mm
- Operating Temperature :
- 150°C TJ
- Gate to Source Voltage (Vgs) :
- 10V
- Length :
- 2.9mm
- Gate Charge (Qg) (Max) @ Vgs :
- 1.57nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 190 ns
- Datasheets
- 5LN01C-TB-E

N-Channel Tape & Reel (TR) 7.8 Ω @ 50mA, 4V ±10V 6.6pF @ 10V 1.57nC @ 10V TO-236-3, SC-59, SOT-23-3
5LN01C-TB-E Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6.6pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 50V and VGS=50V, so the drain-source breakdown voltage is 50V in this case.It is [190 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4V).
5LN01C-TB-E Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 190 ns
5LN01C-TB-E Applications
There are a lot of ON Semiconductor
5LN01C-TB-E applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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