5LN01C-TB-E

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Mfr.Part #
5LN01C-TB-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 50V 100MA 3CP
Stock
4,412
In Stock :
4,412

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Contact Plating :
Tin
Vgs (Max) :
±10V
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
50V
Continuous Drain Current (ID) :
100mA
Current - Continuous Drain (Id) @ 25°C :
100mA Ta
FET Type :
N-Channel
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
250mW Ta
Rds On (Max) @ Id, Vgs :
7.8 Ω @ 50mA, 4V
Width :
1.5mm
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4V
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
6.6pF @ 10V
Pin Count :
3
ECCN Code :
EAR99
Number of Elements :
1
JESD-609 Code :
e6
Published :
2012
Turn On Delay Time :
18 ns
Mount :
Surface Mount
Pbfree Code :
yes
Rise Time :
42ns
Fall Time (Typ) :
105 ns
Power Dissipation :
250mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Height :
1.1mm
Operating Temperature :
150°C TJ
Gate to Source Voltage (Vgs) :
10V
Length :
2.9mm
Gate Charge (Qg) (Max) @ Vgs :
1.57nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
190 ns
Datasheets
5LN01C-TB-E
Introducing Transistors - FETs, MOSFETs - Single onsemi 5LN01C-TB-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:150°C TJ, 5LN01C-TB-E pinout, 5LN01C-TB-E datasheet PDF, 5LN01C-TB-E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi 5LN01C-TB-E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 5LN01C-TB-E


N-Channel Tape & Reel (TR) 7.8 Ω @ 50mA, 4V ±10V 6.6pF @ 10V 1.57nC @ 10V TO-236-3, SC-59, SOT-23-3

5LN01C-TB-E Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6.6pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 50V and VGS=50V, so the drain-source breakdown voltage is 50V in this case.It is [190 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4V).

5LN01C-TB-E Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 190 ns


5LN01C-TB-E Applications


There are a lot of ON Semiconductor
5LN01C-TB-E applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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