50A02MH-TL-E
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- Mfr.Part #
- 50A02MH-TL-E
- Manufacturer
- onsemi
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A 3MCPH
- Stock
- 114,435
- In Stock ：
- 114,435
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Transition Frequency :
- 690MHz
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Height :
- 850μm
- Collector Emitter Saturation Voltage :
- -60mV
- JESD-609 Code :
- e6
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 690MHz
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Width :
- 2.1mm
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 3
- Length :
- 2mm
- Package / Case :
- 3-SMD, Flat Lead
- Max Frequency :
- 690MHz
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 600mW
- Vce Saturation (Max) @ Ib, Ic :
- 120mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Power Dissipation :
- 600mW
- Base Part Number :
- 50A02MH
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 50V
- Factory Lead Time :
- 6 Weeks
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Datasheets
- 50A02MH-TL-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
50A02MH-TL-E Overview
DC current gain in this device equals 200 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -60mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 120mV @ 10mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 690MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 500mA volts.
50A02MH-TL-E Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -60mV
the vce saturation(Max) is 120mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 690MHz
50A02MH-TL-E Applications
There are a lot of ON Semiconductor
50A02MH-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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