3N163-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

-40V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 10µA

Number of Pins :

4

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

20V

Rds On (Max) @ Id, Vgs :

250Ohm @ 100µA, 20V

Input Capacitance (Ciss) (Max) @ Vds :

3.5pF @ 15V

Supplier Device Package :

TO-72

Resistance :

250Ohm

Drain to Source Resistance :

250Ohm

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Element Configuration :

Single

Threshold Voltage :

-2.5V

Drain to Source Voltage (Vdss) :

40V

Package / Case :

TO-206AF, TO-72-4 Metal Can

Vgs (Max) :

±30V

Rise Time :

13ns

Input Capacitance :

3.5pF

Rds On Max :

250 Ω

Contact Plating :

Tin

Power Dissipation :

375mW

FET Type :

P-Channel

Published :

2000

Turn-Off Delay Time :

25 ns

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

50mA Ta

Continuous Drain Current (ID) :

-50mA

Turn On Delay Time :

5 ns

Lead Free :

Lead Free

Power Dissipation-Max :

375mW Ta

Nominal Vgs :

-2.5 V

Number of Channels :

1

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ