3N163-2

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

20V

Qualification Status :

Not Qualified

Number of Elements :

1

Published :

2009

Vgs(th) (Max) @ Id :

5V @ 10µA

Drain Current-Max (Abs) (ID) :

0.05A

Rise Time :

13ns

Mount :

Through Hole

Turn On Delay Time :

5 ns

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Wire

ECCN Code :

EAR99

HTS Code :

8541.21.00.95

Package / Case :

TO-206AF, TO-72-4 Metal Can

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

25 ns

Continuous Drain Current (ID) :

50mA

Feedback Cap-Max (Crss) :

0.7 pF

Drain-source On Resistance-Max :

300Ohm

Contact Plating :

Lead, Tin

Case Connection :

SUBSTRATE

Configuration :

Single

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

3.5pF @ 15V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Packaging :

Tube

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

250 Ω @ 100μA, 20V

JESD-30 Code :

O-MBCY-W4

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

40V

Power Dissipation-Max :

375mW Ta

Current - Continuous Drain (Id) @ 25°C :

50mA Ta