30C02CH-TL-E

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Mfr.Part #
30C02CH-TL-E
Manufacturer
onsemi
Package / Case
SC-96
Datasheet
Download
Description
TRANS NPN 30V 0.7A 3CPH
Stock
2,001
In Stock :
2,001

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Element Configuration :
Single
Max Collector Current :
700mA
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Max Frequency :
540MHz
JESD-609 Code :
e6
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
30V
Terminal Form :
Gull wing
Collector Emitter Saturation Voltage :
850mV
ECCN Code :
EAR99
Gain Bandwidth Product :
540MHz
Max Power Dissipation :
700mW
Lead Free :
Lead Free
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Transistor Type :
NPN
Terminal Position :
Dual
Number of Elements :
1
Transistor Application :
SWITCHING
Surface Mount :
yes
Published :
2003
Height :
900μm
Transition Frequency :
540MHz
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Factory Lead Time :
2 Weeks
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Emitter Base Voltage (VEBO) :
5V
Current - Collector (Ic) (Max) :
700mA
Vce Saturation (Max) @ Ib, Ic :
190mV @ 10mA, 200mA
Collector Base Voltage (VCBO) :
40V
hFE Min :
300
Mounting Type :
Surface Mount
Polarity/Channel Type :
NPN
Length :
2.9mm
Number of Pins :
3
Width :
1.6mm
Pin Count :
3
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 50mA 2V
Collector Emitter Breakdown Voltage :
30V
Package / Case :
SC-96
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
30C02CH-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 30C02CH-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:SC-96, 30C02CH-TL-E pinout, 30C02CH-TL-E datasheet PDF, 30C02CH-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 30C02CH-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 30C02CH-TL-E


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount

30C02CH-TL-E Overview


This device has a DC current gain of 300 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 850mV.A VCE saturation (Max) of 190mV @ 10mA, 200mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 540MHz.A maximum collector current of 700mA volts is possible.

30C02CH-TL-E Features


the DC current gain for this device is 300 @ 50mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 190mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 540MHz


30C02CH-TL-E Applications


There are a lot of ON Semiconductor
30C02CH-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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