2V7002LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Turn On Delay Time :

20 ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

115mA Tc

JESD-609 Code :

e3

Width :

1.4mm

Power Dissipation :

300mW

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

REACH SVHC :

No SVHC

Pin Count :

3

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Power Dissipation-Max :

225mW Ta

Height :

1.01mm

Transistor Application :

SWITCHING

Pbfree Code :

yes

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Feedback Cap-Max (Crss) :

5 pF

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Factory Lead Time :

9 Weeks

Turn-Off Delay Time :

40 ns

Radiation Hardening :

No

Surface Mount :

yes

Length :

3.04mm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Element Configuration :

Single

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Resistance :

7.5Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Published :

2004

Threshold Voltage :

1V

Series :

Automotive, AEC-Q101

Continuous Drain Current (ID) :

115mA