2V7002KT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Published :

2008

Halogen Free :

Halogen Free

Continuous Drain Current (ID) :

320mA

Length :

3.04mm

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±20V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Power Dissipation :

420mW

Pin Count :

3

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Rise Time :

9ns

Terminal Form :

Gull wing

Turn-Off Delay Time :

55.8 ns

Factory Lead Time :

7 Weeks

Feedback Cap-Max (Crss) :

5 pF

ECCN Code :

EAR99

Turn On Delay Time :

12.2 ns

Transistor Element Material :

SILICON

Element Configuration :

Single

FET Type :

N-Channel

Number of Pins :

3

Height :

1.01mm

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

320mA Ta

Fall Time (Typ) :

29 ns

Threshold Voltage :

1V

Input Capacitance (Ciss) (Max) @ Vds :

24.5pF @ 20V

Width :

1.4mm

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

JESD-609 Code :

e3

Number of Terminations :

3

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300mW Tj

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V