2STW100
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- Mfr.Part #
- 2STW100
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 25A TO247-3
- Stock
- 246
- In Stock ：
- 246
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 500μA
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 80mA, 20A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Height :
- 24.45mm
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 25A
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- Reach Compliance Code :
- not_compliant
- Weight :
- 6.500007g
- hFE Min :
- 300
- Packaging :
- Tube
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 1V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN - Darlington
- Polarity :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Base Part Number :
- 2STW
- Pin Count :
- 3
- Max Power Dissipation :
- 130W
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 130W
- Package / Case :
- TO-247-3
- Continuous Collector Current :
- 25A
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 3.5V
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10A 3V
- Datasheets
- 2STW100
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
2STW100 Overview
In this device, the DC current gain is 500 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 80mA, 20A.A 25A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 1V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.
2STW100 Features
the DC current gain for this device is 500 @ 10A 3V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 80mA, 20A
the emitter base voltage is kept at 1V
2STW100 Applications
There are a lot of STMicroelectronics
2STW100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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