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2STP535FP

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Mfr.Part #: 2STP535FP

Manufacturer: STMicroelectronics

Package / Case: TO-220-3 Full Pack

Datasheet: Download

Description: TRANS NPN DARL 180V 8A TO220FP

Stock: 17,210

In Stock ：: 17,210

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Manufacturer :: STMicroelectronics
Product Category :: Transistors - Bipolar (BJT) - Single

Transistor Element Material :: SILICON

Packaging :: Tube

Contact Plating :: Tin

Package / Case :: TO-220-3 Full Pack

Max Collector Current :: 8A

DC Current Gain (hFE) (Min) @ Ic, Vce :: 1000 @ 3A 4V

Collector Emitter Breakdown Voltage :: 180V

Transistor Type :: NPN - Darlington

Max Breakdown Voltage :: 180V

Additional Feature :: BUILT IN BIAS RESISTOR

JEDEC-95 Code :: TO-220AB

Element Configuration :: Single

RoHS Status :: ROHS3 Compliant

Power - Max :: 37W

Lifecycle Status :: ACTIVE (Last Updated: 7 months ago)

Radiation Hardening :: No

Collector Base Voltage (VCBO) :: 180V

Current - Collector Cutoff (Max) :: 50μA

Mount :: Through Hole

Emitter Base Voltage (VEBO) :: 5V

Mounting Type :: Through Hole

Max Power Dissipation :: 37W

Collector Emitter Voltage (VCEO) :: 180V

Polarity :: NPN

Factory Lead Time :: 8 Weeks

Pin Count :: 3

Transistor Application :: SWITCHING

Case Connection :: Isolated

Moisture Sensitivity Level (MSL) :: 1 (Unlimited)

Operating Temperature :: 150°C TJ

Number of Elements :: 1

Vce Saturation (Max) @ Ib, Ic :: 2.5V @ 80mA, 8A

Number of Terminations :: 3

hFE Min :: 200

Collector Emitter Saturation Voltage :: 2V

Base Part Number :: 2STP

ECCN Code :: EAR99

Number of Pins :: 3

JESD-609 Code :: e3

Datasheets: 2STP535FP

2STP535FP Documents

Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STP535FP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case：TO-220-3 Full Pack, Mounting Type：Through Hole, Operating Temperature：150°C TJ, Number of Terminations：3, Base Part Number：2STP, Number of Pins：3, 2STP535FP pinout, 2STP535FP datasheet PDF, 2STP535FP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STP535FP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NPN - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole

2STP535FP Overview

In this device, the DC current gain is 1000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 180V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.

2STP535FP Features

the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V

2STP535FP Applications

There are a lot of STMicroelectronics
2STP535FP applications of single BJT transistors.

Inverter
Interface
Driver
Muting

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