2STP535FP

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Mfr.Part #
2STP535FP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN DARL 180V 8A TO220FP
Stock
17,210
In Stock :
17,210

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
200
Pin Count :
3
Max Power Dissipation :
37W
Collector Emitter Saturation Voltage :
2V
ECCN Code :
EAR99
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
180V
Transistor Type :
NPN - Darlington
Additional Feature :
BUILT IN BIAS RESISTOR
Power - Max :
37W
JEDEC-95 Code :
TO-220AB
Current - Collector Cutoff (Max) :
50μA
Polarity :
NPN
Collector Base Voltage (VCBO) :
180V
Case Connection :
Isolated
Contact Plating :
Tin
Radiation Hardening :
No
Transistor Application :
SWITCHING
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
8 Weeks
Element Configuration :
Single
Mounting Type :
Through Hole
Base Part Number :
2STP
Packaging :
Tube
Package / Case :
TO-220-3 Full Pack
Number of Terminations :
3
Max Collector Current :
8A
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Collector Emitter Voltage (VCEO) :
180V
JESD-609 Code :
e3
Max Breakdown Voltage :
180V
Datasheets
2STP535FP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STP535FP from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:2STP, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, 2STP535FP pinout, 2STP535FP datasheet PDF, 2STP535FP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STP535FP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2STP535FP


NPN - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole

2STP535FP Overview


In this device, the DC current gain is 1000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 180V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.

2STP535FP Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V


2STP535FP Applications


There are a lot of STMicroelectronics
2STP535FP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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