2STP535FP
- Mfr.Part #
- 2STP535FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 180V 8A TO220FP
- Stock
- 17,210
- In Stock :
- 17,210
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 200
- Pin Count :
- 3
- Max Power Dissipation :
- 37W
- Collector Emitter Saturation Voltage :
- 2V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 180V
- Transistor Type :
- NPN - Darlington
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Power - Max :
- 37W
- JEDEC-95 Code :
- TO-220AB
- Current - Collector Cutoff (Max) :
- 50μA
- Polarity :
- NPN
- Collector Base Voltage (VCBO) :
- 180V
- Case Connection :
- Isolated
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Base Part Number :
- 2STP
- Packaging :
- Tube
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminations :
- 3
- Max Collector Current :
- 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Voltage (VCEO) :
- 180V
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 180V
- Datasheets
- 2STP535FP

NPN - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
2STP535FP Overview
In this device, the DC current gain is 1000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 180V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.
2STP535FP Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
2STP535FP Applications
There are a lot of STMicroelectronics
2STP535FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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