2STF1340
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- Mfr.Part #
- 2STF1340
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A SOT89-3
- Stock
- 5,724
- In Stock ：
- 5,724
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 150mA, 3A
- Max Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1.4W
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 40V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- Base Part Number :
- 2STF13
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Flat
- Termination :
- SMD/SMT
- hFE Min :
- 280
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1A 2V
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 350mV
- Number of Pins :
- 3
- Length :
- 4.6mm
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Height :
- 1.6mm
- Width :
- 2.6mm
- Transistor Type :
- NPN
- Power Dissipation :
- 1.4W
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2STF1340
2STF1340 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2STF1340 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 350mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 150mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2STF1340 Features
the DC current gain for this device is 180 @ 1A 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2STF1340 Applications
There are a lot of STMicroelectronics
2STF1340 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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