2STD1360T4
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- Mfr.Part #
- 2STD1360T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 20,405
- In Stock ：
- 20,405
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Pin Count :
- 3
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Gain Bandwidth Product :
- 130MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Frequency :
- 130MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 3A
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 15W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 130MHz
- Base Part Number :
- 2STD1360
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 80
- Number of Elements :
- 1
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Max Collector Current :
- 3A
- Collector Base Voltage (VCBO) :
- 80V
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 15W
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2STD1360T4
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2STD1360T4 Overview
In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2STD1360T4 Features
the DC current gain for this device is 160 @ 1A 2V
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2STD1360T4 Applications
There are a lot of STMicroelectronics
2STD1360T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| 2STD1665T4 | STMicroelectronics | 2,500 | TRANS NPN 65V 6A DPAK |
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