2ST5949
- Mfr.Part #
- 2ST5949
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO3
- Stock
- 10,278
- In Stock :
- 10,278
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Chassis Mount
- Max Power Dissipation :
- 250W
- Mount :
- Chassis Mount, Through Hole
- Power Dissipation :
- 250W
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 26.2mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Length :
- 39.5mm
- Package / Case :
- TO-204AA, TO-3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- PIN/PEG
- Radiation Hardening :
- No
- Max Collector Current :
- 17A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 25MHz
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 250V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- MATTE TIN
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 250V
- Collector Emitter Breakdown Voltage :
- 250V
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Number of Elements :
- 1
- Transition Frequency :
- 25MHz
- Number of Terminations :
- 2
- JESD-30 Code :
- O-MBFM-P2
- Pin Count :
- 2
- Peak Reflow Temperature (Cel) :
- 225
- Frequency :
- 25MHz
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Base Part Number :
- 2ST59
- Collector Emitter Saturation Voltage :
- 3V
- Height :
- 8.7mm
- Transistor Element Material :
- SILICON
- Datasheets
- 2ST5949
2ST5949 Documents

NPN 150°C TJ 5μA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Bulk Chassis Mount
2ST5949 Overview
DC current gain in this device equals 80 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 17A volts.
2ST5949 Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 6V
a transition frequency of 25MHz
2ST5949 Applications
There are a lot of STMicroelectronics
2ST5949 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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