2ST1480FP
- Mfr.Part #
- 2ST1480FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 80V 5A TO220FP
- Stock
- 1,848
- In Stock :
- 1,848
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 25W
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Terminal Position :
- Single
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Max Collector Current :
- 5A
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 3A
- Configuration :
- Single
- Lead Free :
- Lead Free
- hFE Min :
- 50
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 120MHz
- Number of Terminations :
- 3
- Transition Frequency :
- 120MHz
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Frequency :
- 120MHz
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Base Part Number :
- 2ST14
- Max Power Dissipation :
- 25W
- Datasheets
- 2ST1480FP

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
2ST1480FP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 170 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 120MHz in the part.When collector current reaches its maximum, it can reach 5A volts.
2ST1480FP Features
the DC current gain for this device is 170 @ 500mA 5V
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2ST1480FP Applications
There are a lot of STMicroelectronics
2ST1480FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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