2SK3980-TD-E
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- Mfr.Part #
- 2SK3980-TD-E
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- N-CHANNEL MOSFET
- Stock
- 13,000
- In Stock ：
- 13,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 900 mA
- Packaging :
- Tape and Reel
- Gate to Source Voltage (Vgs) :
- 10 V
- Max Operating Temperature :
- 150 °C
- Drain to Source Voltage (Vdss) :
- 60 V
- Number of Pins :
- 3
- RoHS :
- Compliant
- Power Dissipation :
- 3.5 W
- Min Operating Temperature :
- -55 °C
- Datasheets
- 2SK3980-TD-E
Tape and Reel 60 V
2SK3980-TD-E Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10 VV.The transistor must receive a 60 V drain to source voltage (Vdss) in order to function.
2SK3980-TD-E Features
a continuous drain current (ID) of 900 mA
a 60 V drain to source voltage (Vdss)
2SK3980-TD-E Applications
There are a lot of Rochester Electronics
2SK3980-TD-E applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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