2SK3906(Q)
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- Mfr.Part #
- 2SK3906(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20A TO3P
- Stock
- 34,869
- In Stock ：
- 34,869
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 10A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.8mm
- Threshold Voltage :
- 4V
- Fall Time (Typ) :
- 10 ns
- Power Dissipation-Max :
- 150W Tc
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Power Dissipation :
- 150W
- Height :
- 19mm
- Packaging :
- Bulk
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- REACH SVHC :
- Unknown
- Element Configuration :
- Single
- Published :
- 2009
- Continuous Drain Current (ID) :
- 20A
- Nominal Vgs :
- 4 V
- Dual Supply Voltage :
- 600V
- Length :
- 15.9mm
- Rise Time :
- 12ns
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Package / Case :
- TO-3P-3, SC-65-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4250pF @ 25V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Termination :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 600V
- Datasheets
- 2SK3906(Q)
N-Channel Bulk 330m Ω @ 10A, 10V ±30V 4250pF @ 25V 60nC @ 10V TO-3P-3, SC-65-3
2SK3906(Q) Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4250pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
2SK3906(Q) Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
a threshold voltage of 4V
2SK3906(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
2SK3906(Q) applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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