2SK3844(Q)

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Mfr.Part #
2SK3844(Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 60V 45A TO220NIS
Stock
5,797
In Stock :
5,797

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
450W
Operating Temperature :
150°C TJ
Power Dissipation-Max :
45W Tc
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3 Full Pack
Width :
8.1mm
Length :
10mm
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Mount :
Through Hole
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
60V
Vgs(th) (Max) @ Id :
4V @ 1mA
Packaging :
Bulk
Turn-Off Delay Time :
104 ns
Published :
2006
Gate Charge (Qg) (Max) @ Vgs :
196nC @ 10V
Fall Time (Typ) :
104 ns
Continuous Drain Current (ID) :
45A
Number of Pins :
3
FET Type :
N-Channel
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
5.8m Ω @ 23A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
12400pF @ 10V
Height :
4.5mm
Rise Time :
80ns
Current - Continuous Drain (Id) @ 25°C :
45A Ta
Datasheets
2SK3844(Q)
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SK3844(Q) from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3 Full Pack, Number of Pins:3, Mounting Type:Through Hole, 2SK3844(Q) pinout, 2SK3844(Q) datasheet PDF, 2SK3844(Q) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SK3844(Q) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SK3844(Q)


N-Channel Bulk 5.8m Ω @ 23A, 10V ±20V 12400pF @ 10V 196nC @ 10V TO-220-3 Full Pack

2SK3844(Q) Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 12400pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 45A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 104 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

2SK3844(Q) Features


a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 104 ns


2SK3844(Q) Applications


There are a lot of Toshiba Semiconductor and Storage
2SK3844(Q) applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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