2SK3747-1E
- Mfr.Part #
- 2SK3747-1E
- Manufacturer
- onsemi
- Package / Case
- SC-94
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 2A TO3PF-3
- Stock
- 837
- In Stock :
- 837
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 12 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 152 ns
- Drain Current-Max (Abs) (ID) :
- 2A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 18 Weeks
- Package / Case :
- SC-94
- Drain to Source Voltage (Vdss) :
- 1500V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Vgs (Max) :
- ±35V
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 13 Ω @ 1A, 10V
- Additional Feature :
- High Reliability
- Width :
- 5.5mm
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 2A
- Number of Elements :
- 1
- Height :
- 24.5mm
- Power Dissipation :
- 3W
- Pulsed Drain Current-Max (IDM) :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 59 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 3W Ta 50W Tc
- Length :
- 15.5mm
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Published :
- 2013
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 1.5kV
- Rise Time :
- 37ns
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 30V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- 150°C TJ
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 37.5nC @ 10V
- Mounting Type :
- Through Hole
- Datasheets
- 2SK3747-1E

N-Channel Tube 13 Ω @ 1A, 10V ±35V 380pF @ 30V 37.5nC @ 10V 1500V SC-94
2SK3747-1E Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 380pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.5kV. And this device has 1.5kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 152 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 4A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 1500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
2SK3747-1E Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1.5kV voltage
the turn-off delay time is 152 ns
based on its rated peak drain current 4A.
a 1500V drain to source voltage (Vdss)
2SK3747-1E Applications
There are a lot of ON Semiconductor
2SK3747-1E applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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