2SK3707
- Mfr.Part #
- 2SK3707
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A TO220ML
- Stock
- 12,435
- In Stock :
- 12,435
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Turn-Off Delay Time :
- 185 ns
- DS Breakdown Voltage-Min :
- 100V
- Number of Pins :
- 3
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Fall Time (Typ) :
- 60 ns
- Turn On Delay Time :
- 19.5 ns
- HTS Code :
- 8541.29.00.95
- Power Dissipation-Max :
- 2W Ta 25W Tc
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 125 mJ
- Packaging :
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 20V
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation :
- 25W
- Drain-source On Resistance-Max :
- 0.08Ohm
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 100V
- Rise Time :
- 30ns
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 10A, 10V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Continuous Drain Current (ID) :
- 20A
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2013
- Datasheets
- 2SK3707

N-Channel Bulk 60m Ω @ 10A, 10V ±20V 2150pF @ 20V 44nC @ 10V 100V TO-220-3 Full Pack
2SK3707 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 125 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2150pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 185 ns.Peak drain current is 80A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.
2SK3707 Features
the avalanche energy rating (Eas) is 125 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 185 ns
based on its rated peak drain current 80A.
a 100V drain to source voltage (Vdss)
2SK3707 Applications
There are a lot of ON Semiconductor
2SK3707 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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