2SK3700(F)

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Mfr.Part #
2SK3700(F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 900V 5A TO3P
Stock
122
In Stock :
122

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
5A Ta
Input Capacitance (Ciss) (Max) @ Vds :
1150pF @ 25V
Power Dissipation :
150W
Rds On (Max) @ Id, Vgs :
2.5 Ω @ 3A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Lead Free :
Lead Free
Power Dissipation-Max :
150W Tc
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Rise Time :
30ns
Drain to Source Voltage (Vdss) :
900V
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Operating Temperature :
150°C TJ
Number of Elements :
1
Mount :
Through Hole
Height :
19mm
Mounting Type :
Through Hole
Published :
2013
Width :
4.8mm
Packaging :
Bulk
FET Type :
N-Channel
Factory Lead Time :
16 Weeks
RoHS Status :
RoHS Compliant
Length :
15.9mm
Radiation Hardening :
No
Fall Time (Typ) :
60 ns
Package / Case :
TO-3P-3, SC-65-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
5A
Datasheets
2SK3700(F)
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SK3700(F) from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, 2SK3700(F) pinout, 2SK3700(F) datasheet PDF, 2SK3700(F) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SK3700(F) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SK3700(F)


N-Channel Bulk 2.5 Ω @ 3A, 10V 1150pF @ 25V 28nC @ 10V 900V TO-3P-3, SC-65-3

2SK3700(F) Overview


A device's maximum input capacitance is 1150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).

2SK3700(F) Features


a continuous drain current (ID) of 5A
a 900V drain to source voltage (Vdss)


2SK3700(F) Applications


There are a lot of Toshiba Semiconductor and Storage
2SK3700(F) applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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