2SK3700(F)

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Mfr.Part #
2SK3700(F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 900V 5A TO3P
Stock
122
In Stock :
122

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Width :
4.8mm
Lead Free :
Lead Free
Radiation Hardening :
No
Number of Elements :
1
Gate to Source Voltage (Vgs) :
30V
Mount :
Through Hole
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2013
RoHS Status :
RoHS Compliant
Number of Pins :
3
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
5A Ta
Height :
19mm
Drain to Source Voltage (Vdss) :
900V
Package / Case :
TO-3P-3, SC-65-3
Fall Time (Typ) :
60 ns
Operating Temperature :
150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
1150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Continuous Drain Current (ID) :
5A
Power Dissipation-Max :
150W Tc
Rds On (Max) @ Id, Vgs :
2.5 Ω @ 3A, 10V
Power Dissipation :
150W
Vgs(th) (Max) @ Id :
4V @ 1mA
Rise Time :
30ns
Length :
15.9mm
Mounting Type :
Through Hole
Factory Lead Time :
16 Weeks
Datasheets
2SK3700(F)
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SK3700(F) from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, 2SK3700(F) pinout, 2SK3700(F) datasheet PDF, 2SK3700(F) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SK3700(F) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SK3700(F)


N-Channel Bulk 2.5 Ω @ 3A, 10V 1150pF @ 25V 28nC @ 10V 900V TO-3P-3, SC-65-3

2SK3700(F) Overview


A device's maximum input capacitance is 1150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).

2SK3700(F) Features


a continuous drain current (ID) of 5A
a 900V drain to source voltage (Vdss)


2SK3700(F) Applications


There are a lot of Toshiba Semiconductor and Storage
2SK3700(F) applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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