2SK3666-2-TB-E

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Drain Current-Max (Abs) (ID) :

0.01A

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

-30V

Min Operating Temperature :

-55°C

Package / Case :

TO-236-3

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Operating Mode :

Depletion Mode

Number of Elements :

1

Transistor Application :

AMPLIFIER

Power Dissipation :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

4pF

Number of Pins :

3

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

200mW

Continuous Drain Current (ID) :

10mA

FET Technology :

JUNCTION

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e6

Drain to Source Resistance :

200Ohm

Width :

1.5mm

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

6 Weeks

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Height :

1.1mm

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Terminal Position :

Dual

Pin Count :

3

ECCN Code :

EAR99

Length :

2.9mm

Element Configuration :

Single

Published :

2005

Drain to Source Breakdown Voltage :

30V