2SK3666-2-TB-E

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Mfr.Part #
2SK3666-2-TB-E
Manufacturer
Sanyo
Package / Case
TO-236-3
Datasheet
Download
Description
N-CHANNEL JUNCTION SILICON FET F
Stock
7,509
In Stock :
7,509

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Manufacturer :
Sanyo
Product Category :
Transistors - FETs, MOSFETs - Single
Min Operating Temperature :
-55°C
Lead Free :
Lead Free
Transistor Application :
AMPLIFIER
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e6
Operating Mode :
Depletion Mode
Factory Lead Time :
6 Weeks
Max Power Dissipation :
200mW
Length :
2.9mm
Terminal Position :
Dual
Drain to Source Resistance :
200Ohm
Drain to Source Breakdown Voltage :
30V
Element Configuration :
Single
Continuous Drain Current (ID) :
10mA
Packaging :
Tape and Reel (TR)
Max Operating Temperature :
150°C
FET Technology :
JUNCTION
Gate to Source Voltage (Vgs) :
-30V
Number of Terminations :
3
Input Capacitance :
4pF
Width :
1.5mm
Height :
1.1mm
Pbfree Code :
yes
Surface Mount :
yes
Drain to Source Voltage (Vdss) :
30V
Terminal Form :
Gull wing
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Published :
2005
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Drain Current-Max (Abs) (ID) :
0.01A
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Package / Case :
TO-236-3
Power Dissipation :
200mW
Number of Pins :
3
ECCN Code :
EAR99
Datasheets
2SK3666-2-TB-E
Introducing Transistors - FETs, MOSFETs - Single Sanyo 2SK3666-2-TB-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-236-3, Number of Pins:3, 2SK3666-2-TB-E pinout, 2SK3666-2-TB-E datasheet PDF, 2SK3666-2-TB-E amp .Beyond Transistors - FETs, MOSFETs - Single Sanyo 2SK3666-2-TB-E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



2SK3666-2-TB-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at

2SK3666-2-TB-E              Description

 

N – Channel JFET ?It consists of an n – type silicon bar forming the conduction channel for the charge carriers. The pn – junction forming diodes are connected internally and a common terminal called GATE is taken out from the p - Region. The other two terminals viz. Source and Drain are taken out from the bar.

 



2SK3666-2-TB-E                 Applications


·Low-frequency general-purpose amplifier

  impedance conversion  

infrared sensor applications

 

2SK3666-2-TB-E                 Features


·Small IGSS

·Small Ciss

 


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