2SK3666-2-TB-E

Manufacturer :

Sanyo

Product Category :

Transistors - FETs, MOSFETs - Single

Max Power Dissipation :

200mW

Min Operating Temperature :

-55°C

FET Technology :

JUNCTION

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

10mA

Number of Terminations :

3

Height :

1.1mm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Width :

1.5mm

JESD-609 Code :

e6

Lead Free :

Lead Free

Package / Case :

TO-236-3

Surface Mount :

yes

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Elements :

1

Number of Pins :

3

Transistor Application :

AMPLIFIER

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

Pin Count :

3

Drain to Source Resistance :

200Ohm

Length :

2.9mm

Polarity/Channel Type :

N-Channel

Factory Lead Time :

6 Weeks

Power Dissipation :

200mW

ECCN Code :

EAR99

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

-30V

Input Capacitance :

4pF

Drain to Source Voltage (Vdss) :

30V

Published :

2005

Operating Mode :

Depletion Mode

Drain Current-Max (Abs) (ID) :

0.01A

Element Configuration :

Single