2SK3666-2-TB-E
- Mfr.Part #
- 2SK3666-2-TB-E
- Manufacturer
- Sanyo
- Package / Case
- TO-236-3
- Datasheet
- Download
- Description
- N-CHANNEL JUNCTION SILICON FET F
- Stock
- 7,509
- In Stock :
- 7,509
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 200Ohm
- Surface Mount :
- yes
- Package / Case :
- TO-236-3
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Height :
- 1.1mm
- Element Configuration :
- Single
- Pin Count :
- 3
- Width :
- 1.5mm
- Transistor Application :
- AMPLIFIER
- Continuous Drain Current (ID) :
- 10mA
- Number of Elements :
- 1
- Published :
- 2005
- Operating Mode :
- Depletion Mode
- ECCN Code :
- EAR99
- Max Operating Temperature :
- 150°C
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.9mm
- Gate to Source Voltage (Vgs) :
- -30V
- Min Operating Temperature :
- -55°C
- Max Power Dissipation :
- 200mW
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e6
- Input Capacitance :
- 4pF
- FET Technology :
- JUNCTION
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 30V
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 200mW
- Drain Current-Max (Abs) (ID) :
- 0.01A
- Datasheets
- 2SK3666-2-TB-E
2SK3666-2-TB-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at
2SK3666-2-TB-E Description
N – Channel JFET ?It consists of an n – type silicon bar forming the conduction channel for the charge carriers. The pn – junction forming diodes are connected internally and a common terminal called GATE is taken out from the p - Region. The other two terminals viz. Source and Drain are taken out from the bar.
2SK3666-2-TB-E Applications
·Low-frequency general-purpose amplifier
impedance conversion
infrared sensor applications
2SK3666-2-TB-E Features
·Small IGSS
·Small Ciss
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