2SK3666-2-TB-E

Manufacturer :

Sanyo

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e6

Operating Mode :

Depletion Mode

Factory Lead Time :

6 Weeks

Max Power Dissipation :

200mW

Length :

2.9mm

Terminal Position :

Dual

Drain to Source Resistance :

200Ohm

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Continuous Drain Current (ID) :

10mA

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

FET Technology :

JUNCTION

Gate to Source Voltage (Vgs) :

-30V

Number of Terminations :

3

Input Capacitance :

4pF

Width :

1.5mm

Height :

1.1mm

Pbfree Code :

yes

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Drain Current-Max (Abs) (ID) :

0.01A

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Package / Case :

TO-236-3

Power Dissipation :

200mW

Number of Pins :

3

ECCN Code :

EAR99