2SK3565(Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

5A

Drain to Source Voltage (Vdss) :

900V

Fall Time (Typ) :

60 ns

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

RoHS Status :

RoHS Compliant

Rds On Max :

2.5 Ω

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Factory Lead Time :

12 Weeks

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

2.5Ohm @ 3A, 10V

Min Operating Temperature :

-55°C

Supplier Device Package :

TO-220SIS

Rise Time :

30ns

Contact Plating :

Copper, Silver, Tin

Vgs(th) (Max) @ Id :

4V @ 1mA

Mounting Type :

Through Hole

Power Dissipation-Max :

45W Tc

Series :

π-MOSIV

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Input Capacitance :

1.15nF

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Packaging :

Tube

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V