2SK3484-AZ

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.148Ohm

Number of Terminations :

3

Transistor Application :

SWITCHING

Power Dissipation-Max :

1W Ta 30W Tc

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Rise Time :

5ns

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

30 ns

Published :

2006

DS Breakdown Voltage-Min :

100V

Continuous Drain Current (ID) :

16A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

4 ns

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

100V

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Through Hole

Pin Count :

3

Terminal Position :

Single

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9 ns

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

ECCN Code :

EAR99

Mount :

Through Hole

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

125m Ω @ 8A, 10V