2SK3482-AZ

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Terminal Position :

Single

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Continuous Drain Current (ID) :

36A

Operating Temperature :

150°C TJ

HTS Code :

8541.29.00.95

Rds On (Max) @ Id, Vgs :

33m Ω @ 18A, 10V

Fall Time (Typ) :

6 ns

Published :

2006

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Turn-Off Delay Time :

68 ns

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

1W Ta 50W Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

36A Ta

Pin Count :

3

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

15 ns

Rise Time :

10ns

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 10V

Peak Reflow Temperature (Cel) :

260

Mount :

Through Hole

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.039Ohm

JESD-30 Code :

R-PSIP-T3

Packaging :

Bulk