2SK3481-AZ

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Power Dissipation :

1.5W

Case Connection :

DRAIN

Power Dissipation-Max :

1.5W Ta 56W Tc

Drain-source On Resistance-Max :

0.058Ohm

Continuous Drain Current (ID) :

30A

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

50m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 10V

RoHS Status :

ROHS3 Compliant

Rise Time :

10ns

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

60A

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Fall Time (Typ) :

5 ns

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-220-3

Operating Temperature :

150°C TJ

Contact Plating :

Tin

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Turn On Delay Time :

13 ns

Avalanche Energy Rating (Eas) :

68 mJ

Mounting Type :

Through Hole

Turn-Off Delay Time :

53 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Radiation Hardening :

No

Pin Count :

3

Transistor Application :

SWITCHING

Published :

2002