2SK3447TZ-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.95Ohm @ 500mA, 10V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

JESD-30 Code :

O-PBCY-T3

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Pin Count :

3

Product Status :

Obsolete

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

150 V

Surface Mount :

No

Supplier Device Package :

TO-92MOD

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

FET Type :

N-Channel

Series :

-

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

4.5 nC @ 10 V

Drain Current-Max (Abs) (ID) :

1 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

85 pF @ 10 V

JEDEC-95 Code :

TO-92

Drain to Source Voltage (Vdss) :

150 V

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

900mW (Ta)

Drain-source On Resistance-Max :

2.5 Ω

Terminal Finish :

Tin/Copper (Sn/Cu)

Vgs (Max) :

±20V

Brand Name :

Renesas

Number of Terminals :

3

Package / Case :

TO-226-3, TO-92-3 Long Body

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

0.9 W

Operating Temperature :

150°C

Manufacturer :

Renesas Electronics Corporation

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Subcategory :

FET General Purpose Power

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pbfree Code :

yes

Number of Elements :

1

Package Shape :

Round

FET Technology :

METAL-OXIDE SEMICONDUCTOR

HTS Code :

8541.21.00.95

JESD-609 Code :

e2

Package :

Bulk