2SK3447TZ-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.21.00.95

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Copper (Sn/Cu)

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

O-PBCY-T3

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1.95Ohm @ 500mA, 10V

JESD-609 Code :

e2

Surface Mount :

No

Pin Count :

3

Power Dissipation (Max) :

900mW (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

Operating Temperature :

150°C

Drain Current-Max (Abs) (ID) :

1 A

Input Capacitance (Ciss) (Max) @ Vds :

85 pF @ 10 V

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

JEDEC-95 Code :

TO-92

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

150 V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 Long Body

Supplier Device Package :

TO-92MOD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

FET Feature :

-

Package :

Bulk

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

0.9 W

Drain-source On Resistance-Max :

2.5 Ω

Number of Terminals :

3

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

4.5 nC @ 10 V

Brand Name :

Renesas

Manufacturer :

Renesas Electronics Corporation

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Qualification Status :

Not Qualified

Product Status :

Obsolete

Number of Elements :

1

Package Shape :

Round

DS Breakdown Voltage-Min :

150 V

Subcategory :

FET General Purpose Power