2SK3435-Z-AZ

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

96 mJ

DS Breakdown Voltage-Min :

60 V

Transistor Element Material :

SILICON

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.022 Ω

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Feature :

-

Pulsed Drain Current-Max (IDM) :

160 A

Number of Terminals :

2

Manufacturer :

Renesas Electronics Corporation

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Subcategory :

FET General Purpose Power

Brand Name :

Renesas

Terminal Position :

Single

Power Dissipation (Max) :

1.5W (Ta), 84W (Tc)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

14mOhm @ 40A, 10V

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Terminal Form :

Gull wing

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Supplier Device Package :

TO-263, TO-220SMD

Pin Count :

3

Series :

-

Reach Compliance Code :

Compliant

Package :

Bulk

Operating Temperature :

150°C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product Status :

Obsolete

Input Capacitance (Ciss) (Max) @ Vds :

3200 pF @ 10 V

Drain to Source Voltage (Vdss) :

60 V