2SK3435-AZ

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

160 A

Transistor Element Material :

SILICON

Brand Name :

Renesas

FET Feature :

-

Number of Terminals :

3

Surface Mount :

No

Case Connection :

DRAIN

Channel Type :

N

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Package :

Bulk

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60 V

Polarity/Channel Type :

N-Channel

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power Dissipation :

84

Vgs (Max) :

±20V

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

60 V

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Pin Count :

3

Package Shape :

RECTANGULAR

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Subcategory :

FET General Purpose Power

Terminal Position :

Single

Reach Compliance Code :

Compliant

Series :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

14mOhm @ 40A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

150°C

HTS Code :

8541.29.00.95

Supplier Device Package :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.022 Ω

Continuous Drain Current Id :

80

Input Capacitance (Ciss) (Max) @ Vds :

3200 pF @ 10 V

Power Dissipation (Max) :

1.5W (Ta), 84W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

96 mJ

Manufacturer :

Renesas Electronics Corporation

Product Status :

Obsolete

Number of Elements :

1

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED