2SK3435-AZ

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Operating Temperature :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.022 Ω

Power Dissipation :

84

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Package :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

14mOhm @ 40A, 10V

Pulsed Drain Current-Max (IDM) :

160 A

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

60 V

Technology :

MOSFET (Metal Oxide)

Continuous Drain Current Id :

80

Package / Case :

TO-220-3

HTS Code :

8541.29.00.95

Subcategory :

FET General Purpose Power

Brand Name :

Renesas

Surface Mount :

No

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Pin Count :

3

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Type :

Through Hole

Supplier Device Package :

TO-220AB

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Number of Elements :

1

Manufacturer :

Renesas Electronics Corporation

Avalanche Energy Rating (Eas) :

96 mJ

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

60 V

FET Feature :

-

Product Status :

Obsolete

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Number of Terminals :

3

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

3200 pF @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Channel Type :

N

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Series :

-

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

1.5W (Ta), 84W (Tc)