2SK3357-A

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

150W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0088Ohm

Pbfree Code :

yes

Number of Terminals :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

60V

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Operating Temperature (Max) :

150°C

Transistor Element Material :

SILICON

Terminal Position :

Single

Pin Count :

3

HTS Code :

8541.29.00.95

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

75A

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

562 mJ

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

300A

Number of Elements :

1

ECCN Code :

EAR99