2SK3229-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

35 W

Drain Current-Max (Abs) (ID) :

60 A

Subcategory :

FET General Purpose Power

Surface Mount :

No

Pin Count :

3

Min Operating Temperature :

-55 °C

DS Breakdown Voltage-Min :

80 V

Max Operating Temperature :

150 °C

Terminal Form :

THROUGH-HOLE

Turn-On Delay Time :

80 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

*

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Rise Time :

280 ns

Mount :

Through Hole

Channel Type :

N

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

80 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

780 ns

Polarity/Channel Type :

N-Channel

RoHS :

Compliant

Gate to Source Voltage (Vgs) :

20 V

Number of Elements :

1

Continuous Drain Current (ID) :

60 A

JEDEC-95 Code :

TO-220AB

Manufacturer :

Renesas Electronics Corporation

Terminal Finish :

TIN COPPER

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

240 A

Reach Compliance Code :

Compliant

Radiation Hardening :

No

Product Status :

Active

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.012 Ω

Factory Lead Time :

1 Week

Terminal Position :

Single

Number of Pins :

3

Lead Free :

Lead Free

Case Connection :

Isolated

ECCN Code :

EAR99

Continuous Drain Current Id :

60

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Package Shape :

RECTANGULAR

Package :

Bulk