2SK3229-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

60 A

Power Dissipation-Max (Abs) :

35 W

Surface Mount :

No

Product Status :

Active

Case Connection :

Isolated

Terminal Form :

THROUGH-HOLE

Turn-Off Delay Time :

780 ns

Gate to Source Voltage (Vgs) :

20 V

ECCN Code :

EAR99

Pin Count :

3

Min Operating Temperature :

-55 °C

Number of Elements :

1

Series :

*

Rise Time :

280 ns

Subcategory :

FET General Purpose Power

Package Shape :

RECTANGULAR

Number of Pins :

3

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

80 V

Package :

Bulk

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Pbfree Code :

yes

Radiation Hardening :

No

Terminal Position :

Single

Turn-On Delay Time :

80 ns

RoHS :

Compliant

Reach Compliance Code :

Compliant

Number of Terminals :

3

DS Breakdown Voltage-Min :

80 V

Continuous Drain Current (ID) :

60 A

Mount :

Through Hole

Factory Lead Time :

1 Week

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Max Operating Temperature :

150 °C

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.012 Ω

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Terminal Finish :

TIN COPPER

Channel Type :

N

Continuous Drain Current Id :

60

Pulsed Drain Current-Max (IDM) :

240 A

Manufacturer :

Renesas Electronics Corporation