2SK3050TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Transistor Element Material :

SILICON

Published :

2002

Mounting Type :

Surface Mount

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

21 mJ

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Operating Temperature :

150°C TJ

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

2A

Pulsed Drain Current-Max (IDM) :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

20W Tc

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 1mA

Element Configuration :

Single

Power Dissipation :

20W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Rise Time :

17ns

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

29 ns

Voltage - Rated DC :

600V

Fall Time (Typ) :

105 ns

Number of Pins :

3

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Gate Charge (Qg) (Max) @ Vgs :

25.6nC @ 10V

Rds On (Max) @ Id, Vgs :

5.5 Ω @ 1A, 10V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2A

Qualification Status :

Not Qualified

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Rating :

2A

Terminal Finish :

Tin/Copper (Sn98Cu2)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 10V

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

600V