2SJ662-DL-E
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- Mfr.Part #
- 2SJ662-DL-E
- Manufacturer
- Sanyo
- Package / Case
- Datasheet
- Download
- Description
- P-CHANNEL SILICON MOSFET
- Stock
- 480
- In Stock ：
- 480
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Pins :
- 3
- RoHS :
- Non-Compliant
- Package :
- Bulk
- Power Dissipation :
- 75 W
- Drain to Source Resistance :
- 26 mΩ
- Series :
- *
- Continuous Drain Current (ID) :
- 50 A
- Drain to Source Voltage (Vdss) :
- 60 V
- Product Status :
- Active
- Datasheets
- 2SJ662-DL-E
60 V
2SJ662-DL-E Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 26 mΩ. Operating this transistor requires a 60 V drain to source voltage (Vdss).
2SJ662-DL-E Features
a continuous drain current (ID) of 50 A
single MOSFETs transistor is 26 mΩ
a 60 V drain to source voltage (Vdss)
2SJ662-DL-E Applications
There are a lot of Sanyo
2SJ662-DL-E applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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