2SD734F-AA
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- Mfr.Part #
- 2SD734F-AA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- NPN EPITAXIAL PLANAR SILICON TRA
- Stock
- 7,460
- In Stock ：
- 7,460
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 600 mW
- Frequency - Transition :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 50mA, 2V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 700 mA
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Transistor Type :
- NPN
- Supplier Device Package :
- 3-NP
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 20 V
- Product Status :
- Obsolete
- Series :
- -
- Datasheets
- 2SD734F-AA
NPN 150°C (TJ) 1μA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole
2SD734F-AA Overview
In this device, the DC current gain is 160 @ 50mA, 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 500mA.Product comes in the supplier's device package 3-NP.There is a 20 V maximal voltage in the device due to collector-emitter breakdown.
2SD734F-AA Features
the DC current gain for this device is 160 @ 50mA, 2V
the vce saturation(Max) is 300mV @ 50mA, 500mA
the supplier device package of 3-NP
2SD734F-AA Applications
There are a lot of onsemi
2SD734F-AA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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