2SC6096-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

100V

JESD-609 Code :

e6

hFE Min :

300

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Max Power Dissipation :

1.3W

Transition Frequency :

300MHz

Published :

2007

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 5V

Terminal Form :

Flat

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

150mV

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Max Collector Current :

2A

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

1μA ICBO

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Number of Terminations :

3

Collector Emitter Saturation Voltage :

100mV

Number of Elements :

1

Number of Pins :

3

Factory Lead Time :

8 Weeks

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Gain Bandwidth Product :

300MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 100mA, 1A

Collector Base Voltage (VCBO) :

120V

Surface Mount :

yes

Emitter Base Voltage (VEBO) :

6.5V

Package / Case :

TO-243AA

Pin Count :

3

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power - Max :

1.3W