2SC6096-TD-E

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Mfr.Part #
2SC6096-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 100V 2A PCP
Stock
8,045
In Stock :
8,045

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 12 hours ago)
Number of Pins :
3
Number of Elements :
1
Current - Collector Cutoff (Max) :
1μA ICBO
Max Breakdown Voltage :
100V
Terminal Form :
Flat
ECCN Code :
EAR99
hFE Min :
300
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
100V
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Max Power Dissipation :
1.3W
JESD-609 Code :
e6
Emitter Base Voltage (VEBO) :
6.5V
Pin Count :
3
Case Connection :
COLLECTOR
Reach Compliance Code :
not_compliant
Factory Lead Time :
8 Weeks
Collector Base Voltage (VCBO) :
120V
Polarity/Channel Type :
NPN
Max Collector Current :
2A
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Transistor Element Material :
SILICON
Power - Max :
1.3W
Vce Saturation (Max) @ Ib, Ic :
150mV @ 100mA, 1A
Lead Free :
Lead Free
Transition Frequency :
300MHz
Surface Mount :
yes
Package / Case :
TO-243AA
Collector Emitter Voltage (VCEO) :
150mV
Published :
2007
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 100mA 5V
Collector Emitter Saturation Voltage :
100mV
Element Configuration :
Single
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Gain Bandwidth Product :
300MHz
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Datasheets
2SC6096-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC6096-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-243AA, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, 2SC6096-TD-E pinout, 2SC6096-TD-E datasheet PDF, 2SC6096-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC6096-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC6096-TD-E


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

2SC6096-TD-E Overview


In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 100mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 100mA, 1A.With the emitter base voltage set at 6.5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SC6096-TD-E Features


the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 150mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 300MHz


2SC6096-TD-E Applications


There are a lot of ON Semiconductor
2SC6096-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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