2SC6096-TD-E
- Mfr.Part #
- 2SC6096-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A PCP
- Stock
- 8,045
- In Stock :
- 8,045
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Breakdown Voltage :
- 100V
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- hFE Min :
- 300
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.3W
- JESD-609 Code :
- e6
- Emitter Base Voltage (VEBO) :
- 6.5V
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 120V
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 2A
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Transistor Element Material :
- SILICON
- Power - Max :
- 1.3W
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 100mA, 1A
- Lead Free :
- Lead Free
- Transition Frequency :
- 300MHz
- Surface Mount :
- yes
- Package / Case :
- TO-243AA
- Collector Emitter Voltage (VCEO) :
- 150mV
- Published :
- 2007
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Collector Emitter Saturation Voltage :
- 100mV
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 300MHz
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SC6096-TD-E

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC6096-TD-E Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 100mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 100mA, 1A.With the emitter base voltage set at 6.5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SC6096-TD-E Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 150mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 300MHz
2SC6096-TD-E Applications
There are a lot of ON Semiconductor
2SC6096-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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