2SC6095-TD-E
- Mfr.Part #
- 2SC6095-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 2.5A PCP
- Stock
- 8,777
- In Stock :
- 8,777
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 2.5A
- Max Frequency :
- 1MHz
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Transition Frequency :
- 350MHz
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Terminal Form :
- Flat
- Height :
- 1.5mm
- Case Connection :
- COLLECTOR
- Length :
- 4.5mm
- Power - Max :
- 1.3W
- Max Collector Current :
- 2.5A
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 350MHz
- hFE Min :
- 300
- Number of Elements :
- 1
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pin Count :
- 3
- JESD-609 Code :
- e6
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Package / Case :
- TO-243AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 3.5W
- Operating Temperature :
- 150°C TJ
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 120V
- Width :
- 2.5mm
- Emitter Base Voltage (VEBO) :
- 6.5V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 100mV
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 50mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Datasheets
- 2SC6095-TD-E
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NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC6095-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 100mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6.5V.Parts of this part have transition frequencies of 350MHz.During maximum operation, collector current can be as low as 2.5A volts.
2SC6095-TD-E Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 150mV @ 50mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 350MHz
2SC6095-TD-E Applications
There are a lot of ON Semiconductor
2SC6095-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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