2SC6082-1E

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Mfr.Part #
2SC6082-1E
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 50V 15A TO220F-3SG
Stock
11,077
In Stock :
11,077

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Vce Saturation (Max) @ Ib, Ic :
400mV @ 375mA, 7.5A
Collector Emitter Saturation Voltage :
200mV
Element Configuration :
Single
Reach Compliance Code :
not_compliant
Power - Max :
2W
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
60V
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain Bandwidth Product :
195MHz
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 330mA 2V
Polarity/Channel Type :
NPN
Terminal Finish :
Tin (Sn)
Collector Emitter Voltage (VCEO) :
50V
Published :
2013
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
10μA ICBO
Lead Free :
Lead Free
Mounting Type :
Through Hole
Max Power Dissipation :
23W
Collector Emitter Breakdown Voltage :
50V
Package / Case :
TO-220-3 Full Pack
Transistor Type :
NPN
hFE Min :
200
Max Collector Current :
15A
ECCN Code :
EAR99
Pbfree Code :
yes
Continuous Collector Current :
15A
Packaging :
Tube
Emitter Base Voltage (VEBO) :
6V
Factory Lead Time :
2 Weeks
Datasheets
2SC6082-1E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC6082-1E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, 2SC6082-1E pinout, 2SC6082-1E datasheet PDF, 2SC6082-1E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC6082-1E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC6082-1E


NPN 150°C TJ 10μA ICBO NPN TO-220-3 Full Pack Tube Through Hole

2SC6082-1E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 330mA 2V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 375mA, 7.5A.In order to achieve high efficiency, the continuous collector voltage should be kept at 15A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 15A volts at its maximum.

2SC6082-1E Features


the DC current gain for this device is 200 @ 330mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 375mA, 7.5A
the emitter base voltage is kept at 6V


2SC6082-1E Applications


There are a lot of ON Semiconductor
2SC6082-1E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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