2SC6076(TE16L1,NV)
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- Mfr.Part #
- 2SC6076(TE16L1,NV)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A PW-MOLD
- Stock
- 17,577
- In Stock ：
- 17,577
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Power - Max :
- 10W
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Power Dissipation :
- 10W
- Factory Lead Time :
- 16 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 2013
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 150MHz
- Max Collector Current :
- 3A
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Datasheets
- 2SC6076(TE16L1,NV)
NPN 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SC6076(TE16L1,NV) Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
2SC6076(TE16L1,NV) Features
the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
2SC6076(TE16L1,NV) Applications
There are a lot of Toshiba Semiconductor and Storage
2SC6076(TE16L1,NV) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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