2SC6043-AE

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Mfr.Part #
2SC6043-AE
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 50V 2A TO92
Stock
38,315
In Stock :
38,315

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Collector Emitter Saturation Voltage :
150mV
Gain Bandwidth Product :
420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Collector Emitter Breakdown Voltage :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Height :
8.5mm
Emitter Base Voltage (VEBO) :
6V
Transistor Type :
NPN
hFE Min :
200
Terminal Finish :
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Length :
6mm
Packaging :
Tape and Box (TB)
Collector Base Voltage (VCBO) :
80V
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Element Configuration :
Single
Current - Collector Cutoff (Max) :
1μA ICBO
RoHS Status :
RoHS Compliant
Max Collector Current :
2A
Max Power Dissipation :
1W
Mount :
Through Hole
Mounting Type :
Through Hole
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Max Breakdown Voltage :
50V
Max Frequency :
1MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vce Saturation (Max) @ Ib, Ic :
300mV @ 50mA, 1A
Width :
4.7mm
JESD-609 Code :
e2
Polarity/Channel Type :
NPN
Lead Free :
Lead Free
Published :
2005
Factory Lead Time :
4 Weeks
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
50V
Datasheets
2SC6043-AE
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC6043-AE from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Pins:3, 2SC6043-AE pinout, 2SC6043-AE datasheet PDF, 2SC6043-AE amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC6043-AE ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC6043-AE


NPN 150°C TJ 1μA ICBO NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2SC6043-AE Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

2SC6043-AE Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V


2SC6043-AE Applications


There are a lot of ON Semiconductor
2SC6043-AE applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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